JIS H 0604:1995 English Edition

Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method

Abstract

This Japanese Industrial Standard specifies the measurement of minority-carrier bulk recombination lifetime (hereafter, referred to as bulk lifetime or b) in silicon single crystal by d.c. photoconductive decay method. The single crystal to be measured shall have a homogeneous composition, of which the rsistivity shall be at least 1 ohm.cm.

Details

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