JIS K 0148:2005Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
Abstract
This Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 multiplied by 10 to the 10th power atoms/square centimeters to 1 multiplied by 10 to the 14th power atoms/square centimeters; contamination elements with atomic surface densities from 5 multiplied by 10 to the 8th power atoms/square centimeters to 5 multiplied by 10 to the 12th power atoms/square centimeters using a VPD (vapour-phase decomposition) specimen preparation method.
Details
Status |
Current |
Pages |
26 |
Language |
English |
Supersedes |
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Superseded By |
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DocumentFormat |
PDF(Copy/Paste/Networkable) |
Published |
20-03-2005 |
History |
2005(R2014) [20/10/2014] 2005(R2009) [01/10/2009] 2005 [20/03/2005] |
Note
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This product was added to our catalog on Saturday 10 March, 2018.