JIS C 2162:2010 English Edition

Test method of long-term reliability of gate insulator for SiC devices at high temperature

Abstract

This Japanese Industrial Standard specifies the matters related to the long-term reliability test of gate insulator for silicon carbide (SiC) devices at high temperature, namely, the test apparatus used, the structure of a sample, the method for eliminating the effect of defects in an SiC substrate and the test procedure.

Details

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