JIS H 0609:1999 English Edition

Test methods of crystalline defects in silicon by preferential etch techniques

Abstract

This Standard specifies the detection of crystalline defects in silicon by preferential etch techniques with hexavalent-chromium-free etching solution. The objects are single crystal wafer, epitaxial wafer, and its thermally oxidized wafers. The surface crystal orientations are {100}, {111} and {511}.

Details

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